IGNOU MPH-005 Solved Assignment 2024 | MSCPH | IGNOU
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IGNOU MPH-005 Assignment Question Paper 2024
mph-005-39c14d92-fb99-440c-9dce-011958eadd2f
- a) What are the assumption made while deriving the ideal diode equation? Explain the effect of temperature on the breakdown voltage of the diode.
b) Define the External Quantum Efficiency (EQE) of an LED. Calculate its value for a semiconductor material with refractive indexn_(2)=3.6 n_2=3.6 ; assuming the refractive index of the air=1 =1 .
c) Draw the symbols of following diodes:
i) Varactor diode, ii) Schottky diode, iii) p-i-n diode, iv) Tunnel diode
Explain the origin of negative resistance in Gunn diode with the help of appropriate E-k diagram. What are the applications of Gunn diode? - a) Explain with the help of appropriate diagram, how extremely high current gain can be obtained using the Darlington pair configuration of BJT.
b) Explain with the help of a circuit diagram and appropriate waveforms, how an SRC can be used for motor speed control. Suggest the modification in the circuit to turn itON \mathrm{ON} beyond90^(@) 90^{\circ} phase of the input ac cycle. - a) Discuss the effect of various circuit parameters governing the low frequency and high frequency responses of a transistor amplifier. Prove that the high frequency response of an amplifier decreases by
6dB 6 \mathrm{~dB} per octave unit.
b) In single ended input – single ended output configuration of a differential amplifier, the input voltage is5mV 5 \mathrm{mV} . If the collector resistorsR_(C1)=R_(C2)=51kOmega R_{C 1}=R_{C 2}=51 \mathrm{k} \Omega , emitter resistorR_(E)=47kOmega R_E=47 \mathrm{k} \Omega and supply voltage is+-10V \pm 10 \mathrm{~V} , calculate the differential gain and output voltage of the circuit.
b) Draw and explain the equivalent
c) Describe the five processes involved in the generation of microwaves in a vacuum tube device with the help of an example of a reflex klystron oscillator.
5. a) Draw the four possible negative feedback configurations of an op amp. Comment on the input and output impedances of these four circuits.
b) Design and draw the circuit using op amps to solve the following simultaneous equations:
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a) Describe the factors giving rise to the output offset voltage of an op amp. Explain the method for measuring the output resistance of an op amp.
b) Explain the working of a Schmitt trigger using an op amp with the help of appropriate circuit diagram. Design a Schmitt trigger circuit with hysteresis of20% 20 \% of+-V_(SAT) \pm V_{S A T} .
c) With the help of a circuit diagram explain the working of an active full wave rectifier. What are the advantages of using an op amp in rectifier and filter circuits? What is the limitation of using an op amp in a high pass filter circuit? -
a) Explain the constant current limiting circuit implemented in a series voltage regulator. How is this circuit modified to achieve a fold-back configuration?
b) What are the advantages of switch mode dc-dc convertor over linear voltage regulator? Explain the working of buck convertor. -
a) Explain the working of a PLL using a block diagram. Why is the capture range of a PLL always smaller than its lock range?
b) Explain the working of a tracking type ADC. Compare its performance with flash type ADC.
c) List the general purpose registers available in 8085 microprocessor. What is a data pointer? Describe the roles of accumulator and flag register in 8085 .
MPH-005 Sample Solution 2024
mph-005-solved-assignment-2024-ss-8e24e610-06c9-4b43-84f6-a5bf6ef5ab5c
- a) What are the assumption made while deriving the ideal diode equation? Explain the effect of temperature on the breakdown voltage of the diode.
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Low-Level Injection: The injected minority carrier concentration is much smaller than the majority carrier concentration in the respective regions of the diode.
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Complete Depletion Approximation: The space-charge region (depletion region) is fully depleted of free carriers, and the electric field is only present in this region.
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Quasi-Neutral Regions: Outside the depletion region, the semiconductor is neutral, and the electric field is negligible.
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Thermal Equilibrium: The diode is in thermal equilibrium, meaning that the Fermi level is constant throughout the device.
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No Recombination in the Depletion Region: It is assumed that there is no significant recombination of carriers in the depletion region.
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Ideal Diode: The diode is considered to be ideal, with no series resistance, no shunt resistance, and no leakage current when reverse biased.
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Zener Breakdown: In Zener breakdown, which occurs in diodes with a low breakdown voltage, the breakdown voltage decreases with increasing temperature. This is due to the increased thermal energy that helps carriers to tunnel through the potential barrier.
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Avalanche Breakdown: In avalanche breakdown, which occurs in diodes with a higher breakdown voltage, the breakdown voltage increases with increasing temperature. This is because the increased thermal energy leads to a decrease in the mean free path of the carriers, requiring a higher electric field to initiate the avalanche multiplication process.
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